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       Page 1 QW-A1077 +125 O C TSTG Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 5 00mA IF = 1 00mA VF V 0.47 0.36 Reverse current Capacitance between terminals VR = 2 0V f = 1 MHz, and 0 VDC reverse voltage IR CT uA pF 100 100 CDBFR0520 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 n Typ Max Unit IO VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions V V A 0.5 20 30 Tj Storage temperature Junction temperature O C +125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 2 A REV:A 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. SMD Schottky Barrier Diode 1005/SOD-323F Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F standard package m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any - Weight: 0.006 gram(approx.). Io = 5 00 mA VR = 2 0 Volts RoHS Device |